FCPF190N65S3L1
Manufacturer:
On Semiconductor
Mfr.Part #:
FCPF190N65S3L1
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 33 W 650 V Continuous Drain Current (ID):14 A 30 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Power Dissipation | 33 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 14 A |
| Element Configuration | Single |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 165 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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